s mhop microelectronics c orp. a STG8820 symbol v ds v gs i dm 85 w a p d c 1.5 -55 to 150 i d units parameter 20 7 28 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 7a 27 @ vgs=2.5v 20 @ vgs=4.0v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.1 www.samhop.com.tw mar,29,2010 1 details are subject to change without notice. a t a =25 c esd protected. (top vie w) tssop 1 g 2 s 2 s 2 d 1 /d 2 g 1 s 1 s 1 d 1 /d 2 2 3 4 8 7 6 5 s 1 s 2 g 1 d 1 g 2 d 2 t a =70 c 5.6 a t a =70 c 1 w dual n-channel enhancement mode field effect transistor green product
symbol min typ max units bv dss 20 v 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4v,i d =7a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =16v , v gs =0v v gs =12v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua on characteristics STG8820 ver 1.1 0.8 1.5 g fs 23 s v sd c iss 470 pf c oss 164 pf c rss 142 pf q g 17 nc 54 nc q gs 63 nc q gd 45 t d(on) 10 ns t r 2.1 ns t d(off) 4.5 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4v r gen =10 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =7a input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage reverse transfer capacitance v gs =2.5v , i d =6a m ohm c f=1.0mhz c v ds =10v,i d =7a, v gs =4v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.79 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw mar,29,2010 2 _ i s maximum continuous drain-source diode forward current 2.0 a b 17 20 20 27
STG8820 ver 1.1 www.samhop.com.tw mar,29,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 vgs=2v vgs=1.5v v gs =4v vgs= 2.5 v 15 12 9 6 3 0 0 0.4 2.4 2.0 1.6 1.2 0.8 tj=125 c 25 c 36 30 24 18 12 6 1 1 6121824 30 v gs =2.5v v gs =4v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =4v i d =7a v gs =2.5v i d =6 a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 1.20 125 150 100 75 50 25 0 -25 -50 i d =250ua
STG8820 ver 1.1 www.samhop.com.tw mar,29,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage crss coss ciss c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 60 50 40 30 20 10 0 2 2.5 3 3.5 0 gate-source voltage variation with source current 900 750 600 450 300 150 0 0 5 4 3 2 1 0 024 6 810121416 v ds =10v i d =7 a 125 c 25 c 75 c 2 4 6 8 10 12 60 10 1 0.1 0.1 1 10 30 50 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 1 10 100 100 10 1 1000 vds=10v,id=1a vgs=4v td(on) tr td(off) tf 25 c 125 c 75 c r ds (on ) limi t v gs =4v s ingle p uls e t a =25 c 100us d c 10 0ms 1m s 10ms 6 60 4 i d =7 a
a STG8820 ver 1.1 www.samhop.com.tw mar,29,2010 5 figure 13. switching test circuit figure 14. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width inverted v dd r d v v r s v g gs in gen out l 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance
STG8820 ver 1.1 www.samhop.com.tw mar,29,2010 6 package outline dimensions tssop-8 0.85 0.033 0.80 0.031 0.19 0.30 0.007 0.012 1. this drawing is for general information only.refer to jedec drawing mo-153,variation aa,for proper dimensions,tolerances,datums,etc. 2. dimension d does not include mold flash,protrusions or gate burrs.mold flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. dimension e does not include inter-lead flash or protrusions.inter-lead flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. dimension b does not include dambar protrusion.allowable dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.dambar cannot be located on the lower radius of the foot. minimum space between protrusion and adjacent lead is 0.07 mm. notes: 5. dimension d and e to be determined at datum plane h. detail a detail a max min max min 2 3 2 3
STG8820 ver 1.1 www.samhop.com.tw mar,29,2010 7 tssop-8 tape and reel data tssop-8 carrier tape tssop-8 reel unit : @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.08 tssop 8 4.40 1.60 ? 1.50 + 0.1 - 0.0 ? 1.50 + 0.1 - 0.0 12.00 2 0.3 1.75 5.50 2 0.05 8.00 4.00 2.00 2 0.05 0.30 2 0.05 unit : @ tape size 12 @ reel size ? 330 m n ww1 h k sgr v 330 100 12.5 16.0 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5
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